WebJul 12, 2005 · The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers (30) are often used in semiconductor … Webmetal gate dry-etched with a SiCl 4-NF 3 gas mixture ratio of 10% during the end-point step. No etching residues can be observed, although bcc-tantalum is more difficult to etch …
Highly Selective Etching of Tantalum Electrode to …
WebPlasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. ... Tantalum – anisotropic: CF4 + O2: Tantalum – isotropic: CF4 + O2: Tantalum Nitride (TaN) CF4 + O2: Titanium (Ti) Cl2 + BCl3 ... WebJan 1, 2024 · In this paper, tantalum pentoxide (Ta 2 O 5 , tantala) thin films deposited on silicon were tested for two different dry under-etching procedures, XeF 2 and SF 6 plasma, with both of them ... cordless drill holster craftsman
Reactive Ion Etching of Sputter Deposited Tantalum with CF
WebThe invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers ( 30 ) are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper ( 40 ). The tantalum or tantalum nitride films are selectively … WebDec 1, 2010 · The dry etching characteristics of the TaN/HfO2 gate stack structure using Cl2/Ar, Cl2/SF6/Ar and Cl2/SF6/O2/Ar inductively coupled plasmas (ICPs) were investigated and the etch rates of the TaN ... WebApr 15, 2024 · An enhanced and controllable dry etching process of tantalum can be achieved by exploring the main factors that have a major impact on etching mechanism. Tantalum films of thickness of 1 μm sputter-deposited on a silicon substrate and masked with photoresist have been etched in a reactive ion etching system using SiCl 4 and Ar … famowood glaze coat specs